Busque con el número de pieza junto con el fabricante o la descripción
IRGP4055DPBF |
Click to view a larger image
| Part Number | IRGP4055DPBF |
| Manufacturer | International Rectifier |
| Description | This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which... |
| Features |
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRGP4055DPbF
Key Parameters
300 1.70 270 150 V V A °C
VCE min VCE(ON) typ. @ 110A IRP max @ TC= 25°C c TJ max
C
C
G E
C G
E
n-channel
G Gate C Collector
TO-247AC
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and l... |
| Document |
 IRGP4055DPBF Data Sheet
PDF 290.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGP4050 |
IRF |
PDP Switch |
|
| 2 | IRGP4062-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGP4062D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGP4062DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGP4063-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGP4063D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|