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MRFG35010 |
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| Part Number | MRFG35010 |
| Manufacturer | Freescale Semiconductor |
| Description | www.DataSheet4U.com Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with f... |
| Features |
19 −5 33 −65 to +175 175 −20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RθJC Value 5.3 4.8 Unit °C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
MRFG35010 5−1
Freescale Semiconductor Wireless RF Product Device Data
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc... |
| Document |
 MRFG35010 Data Sheet
PDF 275.13KB |
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