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IXGT30N60B2 |
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| Part Number | IXGT30N60B2 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 ... |
| Features |
z
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb.in. 6 4 g g
z z z
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V
z z
z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, ... |
| Document |
 IXGT30N60B2 Data Sheet
PDF 605.82KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXGT30N60B |
IXYS Corporation |
HiPerFASTTM IGBT |
|
| 2 | IXGT30N60B2D1 |
IXYS |
IGBT |
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| 3 | IXGT30N60BD1 |
IXYS Corporation |
HiPerFASTTM IGBT with Diode |
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| 4 | IXGT30N60BU1 |
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HiPerFAST IGBT |
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| 5 | IXGT30N60C2 |
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HiPerFAST IGBT |
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| 6 | IXGT30N60C2D1 |
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HiPerFAST IGBT |
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