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MRF6V2150NB |
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| Part Number | MRF6V2150NB |
| Manufacturer | Motorola Semiconductor |
| Description | www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET... |
| Features |
- 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 12 - 65 to +150 225 Unit Vdc Vdc °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf.... |
| Document |
 MRF6V2150NB Data Sheet
PDF 346.73KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF6V2150N |
Motorola Semiconductor |
RF Power Field Effect Transistor |
|
| 2 | MRF6V2150NBR1 |
Freescale Semiconductor |
RF Power FET |
|
| 3 | MRF6V2150NR1 |
Freescale Semiconductor |
RF Power FET |
|
| 4 | MRF6V2010GN |
NXP |
RF Power FET |
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| 5 | MRF6V2010N |
NXP |
RF Power FET |
|
| 6 | MRF6V2010NB |
NXP |
RF Power FET |
|
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