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STP190NF04 |
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| Part Number | STP190NF04 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
| Features |
C = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 40 40 ± 20 120 120 480 310 2.07 7 860 -55 to 175 ( • •) Pulse width limited by safe operating area. Unit V V V A A A W W/°C V/ns mJ °C EAS (1) Tstg Tj ( •) Current limited by package February 2004 1) ISD ≤190A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STB190NF04/-1 STP190NF04 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case... |
| Document |
 STP190NF04 Data Sheet
PDF 199.95KB |
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Desde 2024. D4U Semiconductor.
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