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FDPF12N35 |
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| Part Number | FDPF12N35 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 7.5A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 15 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2006 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched... |
| Document |
 FDPF12N35 Data Sheet
PDF 822.21KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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