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IXFB38N100Q2 |
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| Part Number | IXFB38N100Q2 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 3... |
| Features |
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Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications
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30...120/7.5...27 N/lb 10 g
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1000 2.5 V
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DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers
Advantages
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID =8 mA VGS = ± 30 V, VDS = 0 VDS = VDSS VGS = 0... |
| Document |
 IXFB38N100Q2 Data Sheet
PDF 153.89KB |
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Desde 2024. D4U Semiconductor.
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