MRF6S21060NR1 Freescale Semiconductor Transistors, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRF6S21060NR1

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Part Number	MRF6S21060NR1
Manufacturer	Freescale Semiconductor
Description	Part Number C1 100 nF Chip Capacitor CDR33BX104AKYS C2, C7 4.7 pF Chip Capacitors ATC100B4R7BT500XT C3, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT C4, C5, C6, C10, C11 10 μF, 35 V Chi...
Features	• Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225_C Capable Plastic Package • N Suffix Indicates Lead--Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S21060N Rev. 5, 12/2008 MRF6S21060NR1 MRF6S21060NBR1 2110--2170 MHz, 14 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, ...
Document	MRF6S21060NR1 Data Sheet PDF 1.33MB

No.	Parte #	Fabricante	Descripción
1	MRF6S21060NBR1	Freescale Semiconductor	RF Power Field Effect Transistors
2	MRF6S21050LR3	Freescale Semiconductor	RF Power Field Effect Transistors
3	MRF6S21050LSR3	Freescale Semiconductor	RF Power Field Effect Transistors
4	MRF6S21100HR3	Freescale Semiconductor	RF Power Field Effect Transistors
5	MRF6S21100HSR3	Freescale Semiconductor	RF Power Field Effect Transistors
6	MRF6S21100NBR1	Freescale Semiconductor	RF Power Field Effect Transistors