MRF6S21050LSR3 Freescale Semiconductor Transistors, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRF6S21050LSR3

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Part Number	MRF6S21050LSR3
Manufacturer	Freescale Semiconductor
Description	Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 µF Chip Capacitor (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Capacitor 47 µF, 16 V Tantalum Capacitor 10 µF, 50 V Chip Capacitors (...
Features	alified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF6S21050LR3 MRF6S21050LSR3 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate...
Document	MRF6S21050LSR3 Data Sheet PDF 582.26KB

No.	Parte #	Fabricante	Descripción
1	MRF6S21050LR3	Freescale Semiconductor	RF Power Field Effect Transistors
2	MRF6S21060NBR1	Freescale Semiconductor	RF Power Field Effect Transistors
3	MRF6S21060NR1	Freescale Semiconductor	RF Power Field Effect Transistors
4	MRF6S21100HR3	Freescale Semiconductor	RF Power Field Effect Transistors
5	MRF6S21100HSR3	Freescale Semiconductor	RF Power Field Effect Transistors
6	MRF6S21100NBR1	Freescale Semiconductor	RF Power Field Effect Transistors