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STB11NB40 |
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| Part Number | STB11NB40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o Value 400 400 ± 30 10.7 6.7 42.8 125 1.0 4.5 -65 to 150 150 (1) ISD ≤ 11A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C ( •) Pulse width limited by safe operating a... |
| Document |
 STB11NB40 Data Sheet
PDF 247.87KB |
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Desde 2024. D4U Semiconductor.
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