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STB200NF03 |
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| Part Number | STB200NF03 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
| Features |
ge slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature ( •) Pulse width limited by safe operating area. (**) Current Limited by Package Value 30 30 ± 20 120 120 480 300 2.0 1.5 1.45 -55 to 175 Unit V V V A A A W W/°C V/ns J °C (1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 25 V October 2002 1/14 www.DataSheet4U.com www.DataSheet4U.com DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulti... |
| Document |
 STB200NF03 Data Sheet
PDF 413.69KB |
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