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NT5DS32M4AT |
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| Part Number | NT5DS32M4AT |
| Manufacturer | Nanya Techology |
| Description | The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM. Read or Write command are used to select the bank a... |
| Features |
CAS Latency and Frequency
Maximum Operating Frequency (MHz)* DDR266A DDR266B DDR200 (-7K) (-75B) (-8B) 2 133 100 100 2.5 143 133 125 * Values are nominal (exact tCK should be used). CAS Latency
• Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ... |
| Document |
 NT5DS32M4AT Data Sheet
PDF 1.48MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NT5DS32M4AW |
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(NT5DSxxMxAx) 128Mb DDR333/300 SDRAM |
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| 2 | NT5DS32M16AF |
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(NT5DSxxMxAF) 512Mb DDR SDRAM |
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| 3 | NT5DS32M16BF |
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(NT5DSxxMxBx) 512Mb DDR SDRAM |
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| 4 | NT5DS32M16BG |
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(NT5DSxxMxBx) 512Mb DDR SDRAM |
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| 5 | NT5DS32M16BS |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
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| 6 | NT5DS32M16BT |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
Desde 2024. D4U Semiconductor.
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