NT5DS128M4BS |
Part Number | NT5DS128M4BS |
Manufacturer | Nanya Techology |
Description | NT5DS128M4BF, NT5DS128M4BT, NT5DS64M8BF, NT5DS64M8BT, NT5DS32M16BF and NT5DS32M16BT are die B of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 110 nm design process. acc... |
Features |
CAS Latency and Frequency
CAS Latency 2 2.5 3 Maximum Operating Frequency (MHz) DDR400 DDR333 DDR266B (5T) (6K) (75B) 133 100 166 166 133 200 -
• • • • • • • • • • • • • • DDR 512M bit, die B, based on 110nm design rules • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for writ... |
Document |
NT5DS128M4BS Data Sheet
PDF 2.36MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NT5DS128M4BF |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM | |
2 | NT5DS128M4BG |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM | |
3 | NT5DS128M4BT |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM | |
4 | NT5DS128M4AF |
Nanya Techology |
(NT5DSxxMxAF) 512Mb DDR SDRAM | |
5 | NT5DS128M4CG |
Nanya Techology |
512Mb DDR SDRAM | |
6 | NT5DS128M4CS |
Nanya Techology |
512Mb DDR SDRAM |