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NT5DS64M8AF |
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| Part Number | NT5DS64M8AF |
| Manufacturer | Nanya Techology |
| Description | The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Wri... |
| Features |
CAS Latency and Frequency
CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR333 DDR266B 6K 75B 133 100 166 133
• • • • • • • • • • • • • • • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands enter... |
| Document |
 NT5DS64M8AF Data Sheet
PDF 3.03MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NT5DS64M8BF |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 2 | NT5DS64M8BG |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 3 | NT5DS64M8BS |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 4 | NT5DS64M8BT |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |
|
| 5 | NT5DS64M8CG |
Nanya Techology |
512Mb DDR SDRAM |
|
| 6 | NT5DS64M8CS |
Nanya Techology |
512Mb DDR SDRAM |
|
Desde 2024. D4U Semiconductor.
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