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NT5DS64M4BW |
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| Part Number | NT5DS64M4BW |
| Manufacturer | Nanya Techology |
| Description | The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Wri... |
| Features |
CAS Latency and Frequency
Maximum Operating Frequency (MHz)* DDR333 DDR266B (-6K) * (-75B) 2 133 100 2.5 166 133 * -6K also meets DDR266A Spec (MHz-CL-tRCD-tRP = 133-2-3-3) CAS Latency
• • • • • • • • • • • • • • • • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data... |
| Document |
 NT5DS64M4BW Data Sheet
PDF 1.87MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NT5DS64M4BF |
Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
|
| 2 | NT5DS64M4BF |
Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
|
| 3 | NT5DS64M4BG |
Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
|
| 4 | NT5DS64M4BS |
Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
|
| 5 | NT5DS64M4BT |
Nanya Techology |
(NT5DSxxMxBx) 256Mb DDR SDRAM |
|
| 6 | NT5DS64M4AT |
Nanya |
(NT5DSxxMxAx) 256Mb DDR333/300 SDRAM |
|
Desde 2024. D4U Semiconductor.
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