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MS2223 |
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| Part Number | MS2223 |
| Manufacturer | Advanced Power Technology |
| Description | The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold DataSheet4U.com metallization and emitter ballasting provides long term reli... |
| Features |
· · · · · · · GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 70 W MINIMUM Gp = 6.7 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold DataSheet4U.com metallization and emitter ballasting provides long term reliability under long pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Parameter (Tcase = 25° ... |
| Document |
 MS2223 Data Sheet
PDF 625.93KB |
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Desde 2024. D4U Semiconductor.
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