MS2214 |
Part Number | MS2214 |
Manufacturer | Advanced Power Technology |
Description | The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term relia... |
Features |
• • • • • • • GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term reliability under JTIDS and similar pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG (Tcase = 25° C) Value 40 8.0 300 +250 - 65 to + 200 Parameter Collector-Supply Voltage* Device Current* Power Dissi... |
Document |
MS2214 Data Sheet
PDF 370.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MS2210 |
CIT Relay |
CIT SWITCH | |
2 | MS2210 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
3 | MS2211 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
4 | MS2211 |
CIT Relay |
CIT SWITCH | |
5 | MS2212 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
6 | MS2213 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS |