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FQP7N80C |
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| Part Number | FQP7N80C |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG... |
| Document |
 FQP7N80C Data Sheet
PDF 871.30KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQP7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 2 | FQP7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 3 | FQP7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 4 | FQP7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQP7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 6 | FQP7N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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