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IRLZ24NS |
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| Part Number | IRLZ24NS |
| Manufacturer | International Rectifier |
| Description | l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... |
| Features |
w internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications.
DataShee
D 2 P ak T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Pe... |
| Document |
 IRLZ24NS Data Sheet
PDF 372.89KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLZ24N |
International Rectifier |
HEXFET POWER MOSFET |
|
| 2 | IRLZ24N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRLZ24NL |
International Rectifier |
Power MOSFET |
|
| 4 | IRLZ24NLPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRLZ24NPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRLZ24NS |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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