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M53230804BY0 |
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| Part Number | M53230804BY0 |
| Manufacturer | Samsung Semiconductor |
| Description | The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-ep... |
| Features |
• Part Identification - M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • JEDEC standard PDpin & pinout • PCB : Height(1000mil), double sided component PERFORMANCE RANGE Speed -C50 -C60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ... |
| Document |
 M53230804BY0 Data Sheet
PDF 543.58KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M53230804BT0-C |
Samsung Semiconductor |
(M53230804BT0-C/BY0) DRAM Module |
|
| 2 | M53230804CT0-C |
Samsung Semiconductor |
(M53230804CT0-C/CY0) DRAM Module |
|
| 3 | M53230804CY0 |
Samsung Semiconductor |
(M53230804CT0-C/CY0) DRAM Module |
|
| 4 | M53230800CB0 |
Samsung Semiconductor |
(M532308x0CB0/CW0) DRAM Module |
|
| 5 | M53230800CW0 |
Samsung Semiconductor |
(M532308x0CB0/CW0) DRAM Module |
|
| 6 | M53230800DB0 |
Samsung Semiconductor |
(M532308x0DB0/DW0) DRAM Module |
|
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