H2N5366 |
Part Number | H2N5366 |
Manufacturer | Hi-Sincerity Mocroelectronics |
Description | The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 Features • This dev... |
Features |
• This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature ...... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .. 400 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...... |
Document |
H2N5366 Data Sheet
PDF 35.59KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | H2N5087 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2 | H2N5088 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
3 | H2N5089 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
4 | H2N5401 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
5 | H2N5551 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR |