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MDS1100 |
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| Part Number | MDS1100 |
| Manufacturer | Advanced Power Technology |
| Description | The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film... |
| Features |
eturn Loss Rise Time Pulse Droop Load Mismatch Tolerance
1
TEST CONDITIONS F = 1030 MHz, Vcc = 50 Volts Note 2
MIN 1000 8.9 45 11
TYP
MAX
UNITS W dB % dB
F = 1030 MHz, Vcc = 50 Volts Note 2 4.0:1
100 0.7
nS dB
FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1
NOTES:
Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 50 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 0.02 V V °C/W 1. At rated output power and pulse conditions 2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts Rev B, September 2005 DataSheet4U.com... |
| Document |
 MDS1100 Data Sheet
PDF 276.18KB |
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