Busque con el número de pieza junto con el fabricante o la descripción
K2101 |
Click to view a larger image
| Part Number | K2101 |
| Manufacturer | Fuji Electric |
| Description | www.DataSheet4U.com 2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ±... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 800 800 6 24 ±30... |
| Document |
 K2101 Data Sheet
PDF 198.83KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K210 |
Aeroflex |
Silicon Zener Diodes |
|
| 2 | K210 |
Knox Semiconductor |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 3 | K210 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE |
|
| 4 | K210 |
Toshiba Semiconductor |
2SK210 |
|
| 5 | K2111 |
Kexin |
MOS Field Effect Transistor |
|
| 6 | K2111 |
NEC |
2SK2111 |
|
Desde 2024. D4U Semiconductor.
|