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HM5116400 |
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| Part Number | HM5116400 |
| Manufacturer | Hitachi |
| Description | The Hitachi HM5116400 Series, HM5117400 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced 0.5 µm CMOS technology for high performance and low power. The HM51... |
| Features |
• • • Single 5 V (±10%) Access time: 50 ns/60 ns/70 ns (max) Power dissipation Active mode : 495 mW/440 mW/385 mW (max) (HM5116400 Series) : 550 mW/495 mW/440 mW (max) (HM5117400 Series) Standby mode : 11 mW (max) : 0.83 mW (max) (L-version) Fast page mode capability Long refresh period 4096 refresh cycles : 64 ms (HM5116400 Series) : 128 ms (L-version) 2048 refresh cycles : 32 ms (HM5117400 Series) : 128 ms (L-version) 3 variations of refresh RAS -only refresh CAS -before-RAS refresh Hidden refresh Battery backup operation (L-version) Test function 16-bit parallel test mode w... |
| Document |
 HM5116400 Data Sheet
PDF 766.62KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HM5116405 |
Hitachi |
(HM5116405 / HM5117405) 16M EDO DRAM |
|
| 2 | HM5116100 |
Hitachi Semiconductor |
16M FP DRAM |
|
| 3 | HM5117400 |
Hitachi |
(HM5116400 / HM5117400) 4M DRAM |
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| 4 | HM5117400AS7GS |
ETC |
CMOS 4M DRAM |
|
| 5 | HM5117400B |
Hitachi |
4M DRAM |
|
| 6 | HM5117405 |
Hitachi |
(HM5116405 / HM5117405) 16M EDO DRAM |
|
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