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MTP20N20E |
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| Part Number | MTP20N20E |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This ad... |
| Features |
ERES 200 VOLTS RDS(on) = 0.16 OHM
®
D
G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 200 200 ± 20 ± 40 20 12 60 125 1.0 – 55 to 150 600 1.00 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C ww w.D a taS hee t4U .co REV 2 Operating an... |
| Document |
 MTP20N20E Data Sheet
PDF 173.64KB |
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