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STP4NA80 |
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| Part Number | STP4NA80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16
o
Value STP4NA80FI
Unit
V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V
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( •) Pulse width limited by safe operating area S a t t e he Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4U .c om 110 0.88 -65 to 150 150 C C February 1994 1/10 www.Dat... |
| Document |
 STP4NA80 Data Sheet
PDF 236.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP4NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 2 | STP4NA40 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 3 | STP4NA40F1 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 4 | STP4NA40FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 5 | STP4NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 6 | STP4NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
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