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MRF141G |
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| Part Number | MRF141G |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141G/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadb... |
| Features |
SS VDGO VGS ID PD Tstg TJ Value 65 65 ± 40 32 500 2.85 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.35 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www.DataSheet4U.com REV 2 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF141G 1 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARAC... |
| Document |
 MRF141G Data Sheet
PDF 156.99KB |
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