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MRF148 |
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| Part Number | MRF148 |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for power amplifie... |
| Features |
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.52 Unit °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 1
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995
MRF148 1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain –Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = ... |
| Document |
 MRF148 Data Sheet
PDF 126.99KB |
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