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MUR10010CT Motorola (MUR10005CT - MUR10020CT) ULTRAFAST RECTIFIERS Datasheet

MUR10010CT Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R


Motorola
MUR10010CT
Part Number MUR10010CT
Manufacturer Motorola
Description ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com ...
Features ...

Document Datasheet MUR10010CT datasheet pdf (683.66KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
80 units: 75.1 USD
BuyNow (No Longer Stocked GeneSic Semiconductor Inc)




MUR10010CT Distributor

part
GeneSic Semiconductor Inc
MUR10010CT
다이오드 어레이 공통 음극 1쌍 표준 100V 50A 섀시 실장 트윈 타워
80 units: 90345.414 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
GeneSic Semiconductor Inc
MUR10010CT
Diode Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R
80 units: 75.1 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Navitas Semiconductor
MUR10010CT
Silicon Rectifier Module - Super Fast Recovery (Std Config) - 100V - 100A - Twin Tower
80 units: 62.16 USD
60 units: 63.43 USD
40 units: 90.13 USD
20 units: 170.25 USD
Distributor
Onlinecomponents.com

0 In Stock
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part
GeneSic Semiconductor Inc
MUR10010CT
100V 100A Twin Tower Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
25 units: 69.05 USD
1 units: 79.68 USD
Distributor
NAC

0 In Stock
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MUR10010CT Similar Datasheet

Part Number Description
MUR10010
manufacturer
MCC
(MUR10005 - MUR10060) 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts
( DataSheet : www.DataSheet4U.com ) MCC Features • • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR10005 THRU MUR10060 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts HALF PACK D Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability • • Maximum Ratings Operating Temperature: -55°C to +175°C Storage Temperature: -55°C to +175°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V H G MCC Part Number MUR10005 MUR10010 MUR10020 MUR10040 MUR10060 Maximum RMS Voltage 35V 70V ...
MUR10010CT
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(MUR10005CT - MUR10060CT) 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts
( DataSheet : www.DataSheet4U.com ) MCC Features • • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR10005CT THRU MUR10060CT 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts FULL PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability • • Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V MCC Part Number MUR10005CT MUR10010CT MUR10020CT MUR10040CT MUR10060CT Maximum RMS Voltage ...
MUR10010CT
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Naina Semiconductor
Super Fast Recovery Diode
Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Features Super Fast Recovery Diode, 100A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR10005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 100 400 MUR10010CT(R) 100 70 100 100 400 MUR10020CT(R) 200 140 200 100 400 Units V V V A A Electrical Characteristics (TJ = 25oC un...
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Silicon Super Fast Recovery Diode
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(AV) = 100 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified P...
MUR10010CTR
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Super Fast Recovery Diode
Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Features Super Fast Recovery Diode, 100A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR10005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 100 400 MUR10010CT(R) 100 70 100 100 400 MUR10020CT(R) 200 140 200 100 400 Units V V V A A Electrical Characteristics (TJ = 25oC un...
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Silicon Super Fast Recovery Diode
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VRRM = 50 V - 200 V IF(AV) = 100 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified P...




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