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STP36NE06FP |
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| Part Number | STP36NE06FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugge... |
| Features |
SO dv/dt T stg Tj July 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Unit
STP36NE06FP 60 60 ± 20 V V V 20 14 144 35 0.27 2000 7 A A A W W/ o C V V/ns
o o
36 24 144 100 0.66 -65 to 175 175
C C 1/9
( •) Pulse width limited by safe operating area (1) ISD ≤ 36 A, d... |
| Document |
 STP36NE06FP Data Sheet
PDF 287.17KB |
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