TC59LM905AMB Toshiba Semiconductor (TC59LM905AMB / TC59LM913AMB) Network FCRAM Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

TC59LM905AMB

Toshiba Semiconductor
TC59LM905AMB
TC59LM905AMB TC59LM905AMB
zoom Click to view a larger image
Part Number TC59LM905AMB
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB is organized as 8,388,608-words × 4 banks × 16...
Features PARAMETER tCK tRC tRAC Clock Cycle Time (min) CL = 3 CL = 4 -50 5.5 ns 5.0 ns 25.0 ns 22.0 ns TBD TBD TBD TC59LM913/05 -55 6.0 ns 5.5 ns 27.5 ns 24.0 ns TBD TBD TBD -60 6.5 ns 6.0 ns 30.0 ns 26.0 ns TBD TBD TBD Random Read/Write Cycle Time (min) Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max)












• Fully Synchronous Operation
• Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS.
• Differential Clock (CLK and CLK ) inputs CS , FN and all address input sign...

Document Datasheet TC59LM905AMB Data Sheet
PDF 661.44KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 TC59LM906AMG-37
Toshiba Semiconductor
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Datasheet
2 TC59LM906AMG-50
Toshiba Semiconductor
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Datasheet
3 TC59LM913AMB
Toshiba Semiconductor
(TC59LM905AMB / TC59LM913AMB) Network FCRAM Datasheet
4 TC59LM914AMG-37
Toshiba Semiconductor
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Datasheet
5 TC59LM914AMG-50
Toshiba Semiconductor
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Datasheet
6 TC59LM806BFT
Toshiba Semiconductor
(TC59LM806BFT / TC59LM814BFT) Double Data Fast Cycle RAM Datasheet
More datasheet from Toshiba Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad