STP10NB50 |
Part Number | STP10NB50 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
Features |
TIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) VISO Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP10NB50 STP10NB50FP 500 500 ± 30 10.6 6.4 42.4 135 1.08 4.5 -65 to 150 150 ( 1) ISD ≤ 10.6 A, di/dt... |
Document |
STP10NB50 Data Sheet
PDF 280.09KB |
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