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RD07MVS1 |
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| Part Number | RD07MVS1 |
| Manufacturer | Mitsubishi Electric |
| Description | RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 •High po... |
| Features |
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MVS1
Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0
Ta=+25°C Vds=10V
Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
60 CHANNEL DISSIPATION Pch(W) 50 40 30 20 10 0
On PCB(*1)
0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C)
Ids(A)
On PCB(*1) with Heat-sink
0
1
2 3 Vgs(V)
4
5
Vds-Ids CHARACTERISTICS 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10
Vgs=5V Ta=+25°C Vgs=4.5V
Vds VS. ... |
| Document |
 RD07MVS1 Data Sheet
PDF 245.00KB |
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