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2SC2298 |
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| Part Number | 2SC2298 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2298 Silicon NPN Epitaxial Application High gain amplifier Outline TO-126 MOD 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storag... |
| Features |
r to emitter saturation voltage Base to emitter saturation voltage Note:
1
4000 10000 10000 — —
1
VCE(sat) VBE(sat)
V V
IC = 400 mA, IB = 0.1 mA (pulse test)
1. The 2SC2298 is grouped by hFE as follows. B C more 5000
hFE1 hFE2 hFE3
more 4000
more 10000 more 30000 more 10000 more 25000
Maximum Collector Dissipation Curve 10 Collector power dissipation PC (W) 3 8 iC(peak)
10
Area of Safe Operation
1µ s
Collector current IC (A)
1.0
IC(max)
0µ s
1m s
PW
6
0.3
4
Ta = 25°C 1 Shot Pulse DC (TC = 25°C)
=1 0m s
era DC Op
2
0.1
tio n
0.03 0 50 100 150 Case temperature TC (°C) 20... |
| Document |
 2SC2298 Data Sheet
PDF 55.53KB |
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