Busque con el número de pieza junto con el fabricante o la descripción
IRLU024N |
Click to view a larger image
| Part Number | IRLU024N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the... |
| Features |
er
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
17 12 72 45 0.3 ± 16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junctio... |
| Document |
 IRLU024N Data Sheet
PDF 162.21KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLU024 |
International Rectifier |
(IRLU/R024) Power MOSFET |
|
| 2 | IRLU024 |
Samsung Electronics |
N-Channel MOSFET |
|
| 3 | IRLU024 |
Vishay |
Power MOSFET |
|
| 4 | IRLU024N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRLU024NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRLU024PBF |
International Rectifier |
HEXFET POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
|