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P5NB60FP |
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| Part Number | P5NB60FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
INGS
Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. Operating Junction T emperature 5 3.1 20 100 0.8 4.5 -65 to 150 150 ( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP5NB60 STP5NB60F P 600 600 ± 30 3... |
| Document |
 P5NB60FP Data Sheet
PDF 136.25KB |
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Desde 2024. D4U Semiconductor.
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