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STP50NE10L |
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| Part Number | STP50NE10L |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance... |
| Features |
D ID IDM( •) Ptot Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area May 1999 Value Unit 100 V 100 V ± 20 V 50 A 35 A 200 A 150 W 1 W/oC 6 V/ns -65 to 175 oC 175 oC (1) ISD ≤ 50 A, di/dt ≤ 275 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STP50NE10L THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Res... |
| Document |
 STP50NE10L Data Sheet
PDF 259.11KB |
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Desde 2024. D4U Semiconductor.
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