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MRF5007 |
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| Part Number | MRF5007 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5007/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5007 is designed for broadband commerci... |
| Features |
POWER FET
CASE 430B –02, Style 1 MAXIMUM RATINGS Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 Meg Ohm) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 25 25 ± 20 4.5 25 0.14 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.8 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable pre... |
| Document |
 MRF5007 Data Sheet
PDF 161.41KB |
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