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SPP11N60CFD |
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| Part Number | SPP11N60CFD |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-... |
| Features |
.6
11
A
40
V/ns
±20
V
±30
125
W
-55... +150
°C
2007-08-30
SPP11N60CFD
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Maximum diode commutation speed
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
di F/dt
Value 80
600
Unit V/ns
A/µs
Symbol
RthJC RthJA T sold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
62
-
- 260 °C
Electrical Characteris... |
| Document |
 SPP11N60CFD Data Sheet
PDF 326.92KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPP11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPP11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPP11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP11N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPP11N60S5 |
Infineon Technologies |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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