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STB95NF03 |
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| Part Number | STB95NF03 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
| Features |
w
w
Parameter
.D
t a
S a
e h
INTERNAL SCHEMATIC DIAGRAM
t e
U 4
D2PAK TO-263 (Suffix “T4”)
.c
3 1
m o
Value 30 30 ± 20 80 80 320 150 1 3.0 720 -55 to 175
Unit V V V A A A W
Drain Current (continuous) at TC = 100°C Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Drain Current (pulsed)
EAS (2) Tstg Tj
( •) Pulse width limited by safe operating area. (*) Current Limited by Package (1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. (2) Starting T j = 25 oC, ... |
| Document |
 STB95NF03 Data Sheet
PDF 377.75KB |
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Desde 2024. D4U Semiconductor.
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