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P3NB60FP |
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| Part Number | P3NB60FP |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Co... |
| Features |
j March 1998
Drain-source Voltage (V GS = 0) Gate-source Voltage
Drain- gate Voltage (R GS = 20 k Ω )
Drain Current (continuous) at T c = 25 C
o
m o .c U 4 t e e h S a t a .D w w w
3 1 2
3 2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Parameter
Value 600
Unit V V V A A
STP3NB60
STP3NB60FP
600
± 30
o
Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
m o .c U 4 t e e h S a at .D w w w
2.1 8... |
| Document |
 P3NB60FP Data Sheet
PDF 265.93KB |
Desde 2024. D4U Semiconductor.
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