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MTP40N10E |
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| Part Number | MTP40N10E |
| Manufacturer | Motorola |
| Description | MOTOROLA w m o Advance Data Sheet.c U TMOS E-FET t4 . ™ eEffect Transistor Power Field e N–Channel h Enhancement–Mode Silicon Gate S a t a D . w w This advanced TMOS E–FET is designed to withstand h... |
| Features |
on) = 0.04 OHM
®
N –Channel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, PEAK IL = 40 Apk, L = 1.0 mH, RG = 25 W ) Thermal Resistance — Junction to Cas... |
| Document |
 MTP40N10E Data Sheet
PDF 154.29KB |
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