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MRF160 |
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| Part Number | MRF160 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Typical Performance at 400 MHz, 28 Vdc Ou... |
| Features |
65 to +150 200 Unit Vdc Vdc Vdc ADC Watts W/°C °C °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 7.2 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995
MRF160 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain –Source Breakdown Voltage (VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA) Zero Gate Voltage Drain Current (VDS... |
| Document |
 MRF160 Data Sheet
PDF 122.15KB |
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