MRF16006 |
Part Number | MRF16006 |
Manufacturer | Tyco Electronics |
Description | SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier application... |
Features |
istance — Junction to Case (1) (2) RθJC 6.8 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
1
MRF16006
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES... |
Document |
MRF16006 Data Sheet
PDF 142.30KB |
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