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MRF166W |
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| Part Number | MRF166W |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Push–Pull Configuration Reduces Even Numb... |
| Features |
n –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 8.0 175 1.0 – 65 to +150 200 Unit Vdc Vdc Adc ADC Watts °C/W °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.0 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA ©MOTOROLA Motor... |
| Document |
 MRF166W Data Sheet
PDF 134.52KB |
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Desde 2024. D4U Semiconductor.
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