STP9NC60FP |
Part Number | STP9NC60FP |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg... |
Features |
= 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature
o
Value ST P9NC60 STP9NC60F P 600 600 ± 30 9.0 5.7 36 125 1.0 4.5 -65 to 150 150
(1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ C V/ns V
o o o
5.2 3.3 36 40 0.32 4.5 2000
C C 1/9
( •) Pulse width limited by safe operating area February 2000 STP9... |
Document |
STP9NC60FP Data Sheet
PDF 108.73KB |
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