C30902S |
Part Number | C30902S |
Manufacturer | PerkinElmer Optoelectronics |
Description | PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 100... |
Features |
• High Quantum Efficiency 77% Typical at 830 nm • C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second • Hermetically Sealed Package • Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2 • High Responsivity - Internal Avalanche Gains in Excess of 150 • Spectral Response Range - (10% Points) 400 to 1000 nm • Time Response - Typically 0.5 ns • Wide Operating Temperature Range - -40°C ... |
Document |
C30902S Data Sheet
PDF 232.32KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C30902 |
PerkinElmer Optoelectronics |
Silicon Avalanche Photodiodes | |
2 | C30902 |
Excelitas |
High-speed solid state detectors | |
3 | C30902BH |
Excelitas |
High-speed solid state detectors | |
4 | C30902E |
PerkinElmer Optoelectronics |
(C309xxx) Silicon Avalanche Photodiodes | |
5 | C30902E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode | |
6 | C30902EH |
PerkinElmer Optoelectronics |
Silicon Avalanche Photodiodes |