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STW18NB40 |
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| Part Number | STW18NB40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled wit... |
| Features |
R VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STW18NB40 400 400 ±30 18.4 11.6 73.6 190 1.52 4.5 –65 to 150 150 (1)ISD<18.4A, di/dt<200A/µ, VDD |
| Document |
 STW18NB40 Data Sheet
PDF 142.26KB |
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Desde 2024. D4U Semiconductor.
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