MRF21030LSR3 |
Part Number | MRF21030LSR3 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station ap... |
Features |
MRF21030LR3 MRF21030LSR3
2.2 GHz, 30 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1 NI - 400 MRF21030LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF21030LSR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Test Conditions Human Body Model Machine Model Value 65 - 0.5, +15 83.3 0.48 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Class 2 (Minimum) M3 (Mi... |
Document |
MRF21030LSR3 Data Sheet
PDF 579.06KB |
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