MRF21010LSR1 |
Part Number | MRF21010LSR1 |
Manufacturer | Motorola |
Description | 2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 µF, 63 V ... |
Features |
ch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 - 0.5, +15 43.75 0.25 - 65 to +150 200 Unit... |
Document |
MRF21010LSR1 Data Sheet
PDF 542.13KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MRF21010LSR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
2 | MRF21010LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
3 | MRF21010LR1 |
Motorola |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
4 | MRF21030LR3 |
Motorola |
RF Power Field Effect Transistors | |
5 | MRF21030LSR3 |
Motorola |
RF Power Field Effect Transistors | |
6 | MRF21030R3 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS |